Product picture
Model/name
Specification/power
Resistance(Ω)
Accuracy
TCR(PPM/°C)
Characteristic
Specification
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UFL precision shunt10~120A0.1mΩ~1mΩ±0.5%，±1%≤100Four terminal connection, excellent long-term stability -
RN1A precision shunt1W~3W3mΩ~100mΩ±5%±25~±50Low temperature coefficient, low inductance, easy to weld -
GFLEV precision shunt0.1JW/150A0.05~0.1mΩ±0.5%~±5%≤100~≤175Four terminal connection, excellent long-term stability -
GFLEV8520 precision shunt350A0.1mΩ±0.2%~±1.0%≤175Four terminal connection, excellent long-term stability -
FL-2-K precision shunt75mV300A±0.2%≤±50Wide temperature range, low surface temperature and high precision -
CFL（M） precision shunts3(W)0.5mR~60mR±0.5%~±5%±50E-Beam welded construction，RoHS Compliant；Inductance less than 10nH. -
RNA/RNB precision shunts0.5~3(W)3mR~200mR±1%~±5%±25~±50High reliability；High overload ability；Extremely low inductance. -
FL-T fixed fixed value shunt116/85，126/10050~1000（A）±0.5%~±0.2%±20，±50High reliability, high overload capability and very low inductance. -
FLQ53 jumper precision shunts4~14(A)2mR~25mR±1%~±5%±50High reliability；High overload ability；Easy to weld；Very low inductance. -
FL-1 precision shunts10~100(A)0.5mR~5mR±0.25%~±1%±25~±50High reliability；High overload ability；Extremely low inductance. -
FL-2(T) precision shunts200~700(A)0.05mR~0.2mR±0.25%~±0.5%±25~±50High reliability；High overload ability；Extremely low inductance. -
BFL precision metal film strip chip shunts5~7(W)0.2mR~3mR±1%~±10%±50E-Beam welded construction；ROHS compliant；The inductance less than 3nH. -
PFL precision shunts for KWH-METERS30~100(A)100μR~1000μR±5%~±10%±50Precision accuracy，high strength，stability and reliability. -
CSR plastic-encased precision chip shunts6,8,10,12,14(A)2mR~25mR±1%~±5%±50Chip-style construct ion with current terminal and voltage terminal. -
WFL plastic-encased precision metal film strip chip shuntCustomizable0.5mR~20mR±1%~±10%±50High strength ,stability ,reliability and excellent solderability . -
GFL precision shunt resistor5A-1000A0.01mR-10mR±0.2%,±0.5%,±1%,±5%≤100PPMCompact structure: high reliability; high overload capability; extremely low inductance.
